Title :
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Evaluation of Future Dielectric Material (High-k Gate Dielectrics of Thin Films) for MOS Technology
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Author :
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Nisha, Jitender Khurana, Amardeep
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Journal name :
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IJMRS's International Journal of Engineering Sciences, ISSN 2277-9698
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Volume :
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Volume 02, Issue 02, Jun. 2013
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Keywords :
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Dielectric, Fabrication, High-k, Leakage current, MOSFET, Silicon dioxide
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Abstract :
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The excellent dielectric properties of silicon dioxide (SiO2) have aided the evolution of microelectronics during the past decades. Reduced feature size improves the performance of an integrated circuit. However the performance of SiO2 as dielectric sets a limit on device scaling. In metal oxide field effect transistor (MOSFET) dielectric films with higher dielectric constant have better control over the channel electrons. A number of high dielectric materials are available to replace SiO2, but most of them have inherent disadvantages and incompatible with existing fabrication technology. Erbium based oxides have shown encouraging performance as high-k dielectric in MOS device.
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